QSD124A4R0 Fairchild Semiconductor, QSD124A4R0 Datasheet - Page 2

• Manufacturer Part Number: QSD124A4R0
• Description: Photodetector Transistors QSD124 T-R
• Manufacturer: Fairchild Semiconductor
• Type: IR Chipr

Specifications of QSD124A4R0

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 7 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 7 us
• Package / Case: T-1 3/4
• Wavelength: 880 nm
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 0.4V
• Dark Current (max): 100nA
• Light Current: 6mA
• Power Dissipation: 100mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 24deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: QSD124A4R0_NL

NOTE:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
5. ! = 880 nm, AlGaAs.
www.fairchildsemi.com
PARAMETER
Peak Sensitivity Wavelength
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL / OPTICAL CHARACTERISTICS
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
QSD122
QSD123
QSD124
1/16”
(5)
(1)
(1.6mm) minimum from housing.
Parameter
(5)
(2,3,4)
(2,3)
E
V
E
CC
e
e
= 0.5 mW/cm
= 5 V, R
= 0.5 mW/cm
TEST CONDITIONS
V
CE
I
E
= 10 V, E
I
C
L
= 100 µA
= 100 V I
(T
= 1 mA
A
2
= 25°C unless otherwise specified)
, I
2
, V
C
e
C
= 0
= 0.5 mA
CE
= 0.2 mA
= 5 V
Symbol
QSD122
T
T
2 OF 4
T
T
V
V
SOL-F
SOL-I
P
OPR
STG
CE
EC
D
(T
A
PLASTIC SILICON INFRARED
=25°C)
SYMBOL
V
BV
BV
I
CE (SAT)
C (ON)
I
!
CEO
"
t
t
PS
CEO
ECO
r
f
260 for 10 sec
240 for 5 sec
1.00
4.00
6.00
MIN
QSD123
-40 to +100
-40 to +100
30
—
—
—
—
—
—
5
PHOTOTRANSISTOR
Rating
100
30
5
TYP
880
±12
—
—
—
—
—
—
—
7
7
QSD124
16.00
MAX
6.00
7/20/01
100
0.4
—
—
—
—
—
—
—
Unit
mW
°C
°C
°C
°C
V
V
DS300361
UNITS
Deg.
mA
nm
nA
µs
V
V
V