SI4228DY-T1-E3 Vishay, SI4228DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4228DY-T1-E3
• Description: MOSFET 2N-CH 25V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4228DY-T1-E3

• Input Capacitance (ciss) @ Vds: 790pF @ 12.5V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4228DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66591.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.02
0.02
0.05
0.1
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.2
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
1
A
S10-1043-Rev. A, 03-May-10
= P
t
2
Document Number: 66591
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 110 °C/W
1000
1
0