SI4228DY-T1-E3 Vishay, SI4228DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4228DY-T1-E3
• Description: MOSFET 2N-CH 25V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4228DY-T1-E3

• Input Capacitance (ciss) @ Vds: 790pF @ 12.5V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66591
S10-1043-Rev. A, 03-May-10
4
3
2
1
0
0
25
D
Power, Junction-to-Foot
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
12
9
6
3
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
Package Limited
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
25
150
Power, Junction-to-Ambient
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4228DY
www.vishay.com
125
150
5