SI4228DY-T1-E3 Vishay, SI4228DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4228DY-T1-E3
• Description: MOSFET 2N-CH 25V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4228DY-T1-E3

• Input Capacitance (ciss) @ Vds: 790pF @ 12.5V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 66591
S10-1043-Rev. A, 03-May-10
0.030
0.024
0.018
0.012
0.006
10
50
40
30
20
10
8
6
4
2
0
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
V
= 8.6 A
GS
V
3
0.3
10
DS
= 2.5 V
V
DS
= 12.5 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
6
D
- Total Gate Charge (nC)
V
DS
Gate Charge
- Drain Current (A)
0.6
20
= 6 V
9
V
V
GS
GS
V
0.9
30
V
= 10 V
= 4.5 V
DS
GS
12
= 20 V
= 10 V thru 3 V
V
V
GS
GS
1.2
40
= 1 V
= 2 V
15
1.5
50
18
1200
900
600
300
1.5
1.3
1.1
0.9
0.7
5
4
3
2
1
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
= 8.6 A
V
V
0.5
GS
Transfer Characteristics
DS
5
T
0
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
T
C
25
Capacitance
C
C
= 125 °C
T
iss
oss
C
= 25 °C
1.0
10
50
Vishay Siliconix
75
V
Si4228DY
GS
= 10 V
www.vishay.com
1.5
100
15
V
T
C
GS
= - 55 °C
= 4.5 V
125
2.0
150
20
3