SI4228DY-T1-E3 Vishay, SI4228DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4228DY-T1-E3
• Description: MOSFET 2N-CH 25V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4228DY-T1-E3

• Input Capacitance (ciss) @ Vds: 790pF @ 12.5V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4228DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
10
1.2
1.0
0.8
0.6
0.4
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
V
0.3
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
T
- Temperature (°C)
J
= 150 °C
I
D
0.6
50
= 250 μA
75
T
J
= - 50 °C
T
0.01
100
0.9
J
100
0.1
10
= 25 °C
1
0.1
Safe Operating Area, Junction-to-Ambient
125
* V
Limited by R
Single Pulse
GS
T
A
1.2
> minimum V
150
= 25 °C
V
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
BVDSS Limited
0.04
0.03
0.02
0.01
0.00
10
DS(on)
50
40
30
20
10
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
100 μs
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
2
V
0.01
GS
100
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S10-1043-Rev. A, 03-May-10
Document Number: 66591
6
I
D
= 8.6 A
T
1
T
J
J
= 125 °C
8
= 25 °C
10
1
0