SI4228DY-T1-E3 Vishay, SI4228DY-T1-E3 Datasheet

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SI4228DY-T1-E3

Manufacturer Part Number
SI4228DY-T1-E3
Description
MOSFET 2N-CH 25V 8A SO8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4228DY-T1-E3

Input Capacitance (ciss) @ Vds
790pF @ 12.5V
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Power - Max
3.1W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4228DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
e. Package limited.
Document Number: 66591
S10-1043-Rev. A, 03-May-10
#
Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
25
(V)
C
G
G
S
S
1
1
2
2
= 25 °C.
0.020 at V
0.024 at V
0.018 at V
1
2
3
4
R
DS(on)
Top View
GS
GS
GS
SO-8
J
(Ω)
= 4.5 V
= 2.5 V
= 150 °C)
= 10 V
b, d
Dual N-Channel 25 V (D-S) MOSFET
8
7
6
5
I
D
D
D
D
D
(A)
1
1
2
2
7.5
8
8
Steady State
a, e
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
7.8 nC
g
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Synchronous Buck Converter
• DC/DC Converter
Definition
Typical
52
30
g
and UIS Tested
®
Power MOSFET
G
1
- 55 to 150
N-Channel MOSFET
8
6.9
1.7
1.3
11.25
Limit
± 12
2
b, c, e
2.6
3.1
25
50
15
8
8
b, c
2
e
e
b, c
b, c
b, c
D
S
1
1
Maximum
62.5
40
Vishay Siliconix
G
Si4228DY
2
N-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4228DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4228DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 66591 S10-1043-Rev. A, 03-May- thru 0.9 1.2 1.5 1200 900 600 = 4 300 1.5 1.3 1 0.9 0 Si4228DY Vishay Siliconix ° 125 ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si4228DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.2 1 250 μA D 0.8 0.6 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.04 0.03 0. ° °C J 0.00 0.9 1 100 125 150 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4228DY Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 5 ...

Page 6

... Si4228DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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