SI4214DDY-T1-E3 Vishay, SI4214DDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4214DDY-T1-E3
• Description: MOSFET 2N-CH 30V 8.5A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4214DDY-T1-E3

• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: *
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4214DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 0.7
- 1.0
- 0.1
0.01
100
0.5
0.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
T
J
J
25
- Temperature (°C)
= 150 °C
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
0.1
10
100
T
1
0.01
J
= 25 °C
1.0
I
Safe Operating Area, Junction-to-Ambient
D
* V
Single Pulse
125
= 5 mA
T
GS
A
= 25 °C
New Product
> minimum V
V
1.2
150
0.1
DS
Limited by R
- Drain-to-Source Voltage (V)
GS
at which R
1
DS(on)
BVDSS Limited
*
0.10
0.08
0.06
0.04
0.02
0.00
DS(on)
50
40
30
20
10
0
0
10
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
100 ms
1 ms
10 ms
1 s
10 s
DC
2
V
0.01
GS
100
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S09-1817-Rev. B, 14-Sep-09
Document Number: 65022
6
7
1
T
T
J
I
D
J
8
= 125 °C
= 25 °C
= 8 A
9
10
1
0