SI4214DDY-T1-E3 Vishay, SI4214DDY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4214DDY-T1-E3
• Description: MOSFET 2N-CH 30V 8.5A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4214DDY-T1-E3

• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: *
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4214DDY
Vishay Siliconix
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
V
V
Pulse Diode Forward Current
Body Diode Voltage
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On -State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
a
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
I
I
C
V
DS(on)
C
t
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
R
SM
I
t
t
t
oss
t
t
DS
t
t
SD
iss
rss
S
rr
fs
gs
gd
a
b
r
f
r
f
rr
g
g
/T
/T
J
J
I
New Product
F
V
V
V
V
I
= 5 A, dI/dt = 100 A/µs, T
I
DS
DS
D
D
DS
DS
≅ 5 A, V
≅ 5 A, V
= 30 V, V
= 15 V, V
V
= 15 V, V
V
= 15 V, V
V
V
V
DS
V
V
V
DS
V
V
GS
DS
DS
DD
DD
GS
Test Conditions
GS
DS
= 0 V, V
= V
= 0 V, I
= 30 V, V
= 5 V, V
I
I
= 15 V, R
= 15 V, R
= 4.5 V, I
D
GEN
T
= 10 V, I
= 15 V, I
D
GEN
f = 1 MHz
C
I
= 250 µA
= 250 µA
GS
GS
GS
S
GS
GS
= 25 °C
= 2 A
, I
= 4.5 V, R
= 10 V, R
= 0 V, TJ = 55 °C
= 0 V, I
D
GS
= 4.5 V, I
= 10 V, I
D
GS
= 250 µA
= 250 µA
GS
D
D
D
L
L
= ± 20 V
= 10 V
= 8 A
= 8 A
= 5 A
= 3 Ω
= 3 Ω
= 0 V
D
= 1 MHz
g
D
g
D
J
= 1 Ω
= 1 Ω
= 25 °C
= 8 A
= 8 A
Min.
1.2
0.5
30
20
0.016
0.019
- 5.2
14.5
0.77
Typ.
660
140
3.0
7.1
1.9
2.7
2.6
27
86
14
45
18
12
10
15
17
10
S09-1817-Rev. B, 14-Sep-09
7
7
9
7
Document Number: 65022
0.0195
0.023
Max.
100
2.5
5.2
2.8
1.1
10
22
11
28
80
35
24
14
20
30
14
30
34
18
1
mV/°C
Unit
nC
nC
nA
µA
pF
nS
ns
ns
V
V
A
Ω
S
A
V
Ω