SI4214DDY-T1-E3 Vishay, SI4214DDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4214DDY-T1-E3
• Description: MOSFET 2N-CH 30V 8.5A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4214DDY-T1-E3

• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: *
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65022
S09-1817-Rev. B, 14-Sep-09
0.030
0.026
0.022
0.018
0.014
0.010
10
40
32
24
16
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
0
0.0
0.0
0
I
D
3.2
0.5
10
= 8 A
V
DS
Q
Output Characteristics
V
V
g
GS
GS
- Drain-to-Source Voltage (V)
V
- Total Gate Charge (nC)
I
DS
D
= 4.5 V
= 10 V
Gate Charge
- Drain Current (A)
V
6.4
1.0
20
= 10 V
GS
= 10 V thru 4 V
V
DS
9.6
1.5
30
= 15 V
V
V
GS
DS
= 3 V
12.8
= 20 V
2.0
40
New Product
2.5
50
16
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
I
rss
D
- 25
= 8 A
T
C
T
C
= 125 °C
1
6
V
V
= 25 °C
GS
Transfer Characteristics
DS
C
T
0
oss
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
Capacitance
25
12
2
C
iss
50
Vishay Siliconix
T
C
Si4214DDY
= - 55 °C
18
V
3
75
GS
= 10 V
www.vishay.com
V
100
GS
24
4
= 4.5 V
125
150
30
5
3