SI4214DDY-T1-E3 Vishay, SI4214DDY-T1-E3 Datasheet

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SI4214DDY-T1-E3

Manufacturer Part Number
SI4214DDY-T1-E3
Description
MOSFET 2N-CH 30V 8.5A SO8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4214DDY-T1-E3

Input Capacitance (ciss) @ Vds
660pF @ 15V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
*
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Power - Max
3.1W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4214DDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 65022
S09-1817-Rev. B, 14-Sep-09
Ordering Information: Si4214DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
C
= 25 °C.
0.0195 at V
0.023 at V
G
G
S
S
1
1
2
2
R
DS(on)
1
2
3
4
GS
GS
(Ω)
Top View
J
= 4.5 V
= 10 V
= 150 °C)
SO-8
b, d
Dual N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
8.5
8.6
(A)
D
D
D
D
1
1
2
2
a
A
Q
= 25 °C, unless otherwise noted
Steady-State
g
7.1
(Typ.)
t ≤ 10 s
New Product
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Notebook System Power
• Low Current DC/DC
Definition
Compliant to RoHS Directive 2002/95/EC
Symbol
R
R
thJA
thJF
G
1
Symbol
T
g
J
V
V
E
I
I
I
N-Channel MOSFET
P
, T
DM
I
I
SM
AS
DS
GS
AS
Tested
D
S
D
®
stg
Power MOSFET
D
S
1
1
Typ.
52
30
- 55 to 150
1.25
G
7.5
5.9
1.8
2.0
Limit
± 20
2
8.5
7.5
2.8
3.1
2.0
30
30
30
10
5
b, c
b, c
b, c
b, c
b, c
N-Channel MOSFET
Vishay Siliconix
Si4214DDY
Max.
62.5
40
D
S
2
2
www.vishay.com
Unit
°C
W
V
A
°C/W
Unit
1

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SI4214DDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4214DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4214DDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On -State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 65022 S09-1817-Rev. B, 14-Sep-09 New Product 1.5 2.0 2.5 1000 800 600 400 200 9.6 12.8 16 Si4214DDY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 ...

Page 4

... Si4214DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0. °C J 0.06 0.04 0.02 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4214DDY Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 5 ...

Page 6

... Si4214DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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