SI4214DDY Vishay Siliconix, SI4214DDY Datasheet

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SI4214DDY

Manufacturer Part Number
SI4214DDY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Part Number:
SI4214DDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4214DDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4214DDY-T1-GE3
0
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Part Number:
SI4214DDY-T1-GE3
Quantity:
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Part Number:
SI4214DDY-T1-GE3
Quantity:
70 000
www.DataSheet.co.kr
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 65022
S09-1817-Rev. B, 14-Sep-09
Ordering Information: Si4214DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
C
= 25 °C.
0.0195 at V
0.023 at V
G
G
S
S
1
1
2
2
R
DS(on)
1
2
3
4
GS
GS
(Ω)
Top View
J
= 4.5 V
= 10 V
= 150 °C)
SO-8
b, d
Dual N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
8.5
8.6
(A)
D
D
D
D
1
1
2
2
a
A
Q
= 25 °C, unless otherwise noted
Steady-State
g
7.1
(Typ.)
t ≤ 10 s
New Product
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Notebook System Power
• Low Current DC/DC
Definition
Compliant to RoHS Directive 2002/95/EC
Symbol
R
R
thJA
thJF
G
1
Symbol
T
J
g
V
V
E
I
I
N-Channel MOSFET
I
P
, T
DM
SM
I
I
AS
DS
GS
Tested
D
S
AS
D
®
stg
Power MOSFET
D
S
1
1
Typ.
52
30
- 55 to 150
1.25
G
7.5
5.9
1.8
2.0
Limit
± 20
2
8.5
7.5
2.8
3.1
2.0
30
30
30
10
5
b, c
b, c
b, c
b, c
b, c
N-Channel MOSFET
Vishay Siliconix
Si4214DDY
Max.
62.5
40
D
S
2
2
www.vishay.com
Unit
°C
W
V
A
°C/W
Unit
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI4214DDY Summary of contents

Page 1

... Top View Ordering Information: Si4214DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4214DDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On -State Drain Current Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...

Page 3

... V thru 1.0 1.5 2.0 2 Drain Current ( 6.4 9.6 12.8 16 Gate Charge Si4214DDY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 ...

Page 4

... Si4214DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.6 0.8 1.0 1 250 µ 100 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4214DDY Vishay Siliconix 125 150 1.5 1.2 0.9 0.6 0.3 0 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...

Page 6

... Si4214DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... B 0.35 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.50 0.93 q 0° 8° S 0.44 0.64 Package Information Vishay Siliconix All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.0075 0.010 0.189 0.196 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.020 0.020 0.037 0° ...

Page 8

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...

Page 9

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 10

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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