H11L1-M Fairchild Semiconductor, H11L1-M Datasheet
H11L1-M
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H11L1-M Summary of contents
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... ANODE 2 CATHODE 3 ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0.3 Description The H11LXM series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. trigger, which provides hysteresis for noise immunity and pulse shaping. The detector circuit is optimized for simplicity of operation and utilizes an open collector output for maximum application flexibility ...
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... Detector Power Dissipation @ 25°C D Derate Linearly from 25° Allowed Range Allowed Range Output Current O 4 ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0 25°C unless otherwise specified.) A Parameters 2 Value Units -40 to +150 °C -40 to +85 °C 260 for 10 sec °C 250 mW 2.94 mW/°C 60 ...
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... LED to be driven at a current greater than 1.6mA to guarantee the device will turn on. A 10% guard band is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 60mA. ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0 25°C Unless otherwise specified.) ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0.3 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 4 Min. Typ. Max. ...
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... TEMPERATURE ( A Figure 5. Supply Current vs. Supply Voltage 5mA – SUPPLY VOLTAGE (V) CC ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0.3 1 270 1.4 A 1.2 1.0 0 Figure 4. Output Voltage, Low vs. Load Current 2 1 0.9 0.8 0.7 0.6 0.5 0.4 NORMALIZED TO: VCC = 5V 0 ...
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... Typical Performance Curves 0. Figure 7. Switching Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0.3 (Continued H11L1 6 R 270 50 off www.fairchildsemi.com 10% 90% ...
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... Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0.3 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
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... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0.3 Order Entry Identifier (Example) H11L1M ...
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... C 140 120 100 ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0.3 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 260 C Time above 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 9 Ø ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation H11L1M, H11L2M, H11L3M Rev. 1.0.3 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...