SUM110N04-04-E3 Vishay, SUM110N04-04-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110N04-04-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,110A I(D),TO-263AB
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110N04-04-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUM110N04-04-E3; SUM110N04-04-E3TR

SUM110N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.0
1.6
1.2
0.8
0.4
0.0
1000
100
0.00001
0.1
- 50 - 25
10
1
On-Resistance vs. Junction Temperature
V
I
D
GS
I
AV
= 30 A
= 10 V
(A) at T
0.0001
T
Avalanche Current vs. Time
0
J
- Junction Temperature (°C)
A
25
= 150 °C
0.001
50
t
in
I
(s)
75
AV
(A) at T
0.01
100
A
125
= 25 °C
0.1
150
175
1
100
10
56
52
48
44
40
1
0
- 50 - 25
Source-Drain Diode Forward Voltage
I
D
= 1 mA
V
T
SD
T
0
J
vs. Junction Temperature
0.3
J
Drain Source Breakdown
= 150 °C
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
25
50
0.6
S-80108-Rev. E, 21-Jan-08
Document Number: 72077
75
100
T
J
= 25 °C
0.9
125
150
175
1.2