SI5855DC-T1-E3 Vishay, SI5855DC-T1-E3 Datasheet - Page 6

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.7A I(D),LLCC

SI5855DC-T1-E3

Manufacturer Part Number
SI5855DC-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.7A I(D),LLCC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5855DC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
110 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.7 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5855DC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5855DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si5855DC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72232.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
0.02
0.2
-4
0.05
0.02
0.1
Duty Cycle = 0.5
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
600
500
400
300
200
100
10
0
-2
0
4
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
V
10
KA
-1
- Reverse Voltage (V)
Capacitance
8
12
1
10
-1
16
20
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
S10-0547-Rev. C, 08-Mar-10
t
2
DM
Document Number: 72232
Z
thJA
thJA
100
t
t
(t)
1
2
= 95 °C/W
600
10

Related parts for SI5855DC-T1-E3