SI5855DC-T1-E3 Vishay, SI5855DC-T1-E3 Datasheet - Page 5

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.7A I(D),LLCC

SI5855DC-T1-E3

Manufacturer Part Number
SI5855DC-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.7A I(D),LLCC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5855DC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
110 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.7 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5855DC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5855DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
0.0001
0.001
0.01
100
0.1
10
1
- 50
0.01
0.01
0.1
0.1
2
1
2
1
Reverse Current vs. Junction Temperature
10
10
- 25
-4
-4
0.05
0.05
0.02
0.02
0.2
0.1
0.1
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
Single Pulse
0
T
J
20 V
- Junction Temperature (°C)
25
10
10 V
-3
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
0.1
10
10
1
1
-1
0.0
0.1
T
J
V
Forward Voltage Drop
F
= 150 °C
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
- Forward Voltage Drop (V)
0.2
P
DM
JM
- T
1
t
A
1
= P
0.3
Vishay Siliconix
t
2
DM
Z
thJA
100
thJA
Si5855DC
T
t
t
1
2
0.4
(t)
J
= 90 °C/W
= 25 °C
www.vishay.com
0.5
600
10
0.6
5

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