SI5855DC-T1-E3 Vishay, SI5855DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5855DC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.7A I(D),LLCC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5855DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5855DC-T1-E3TR

Si5855DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
Threshold Voltage
- Source-to-Drain Voltage (V)
T
T
J
J
25
- Temperature (°C)
= 150 °C
0.6
50
0.8
I
D
= 250 µA
75
T
1.0
0.01
J
100
100
0.1
= 25 °C
10
1
0.1
1.2
125
* V
Limited by R
Limited
I
GS
D(on)
> minimum V
150
1.4
Single Pulse
V
T
DS
A
Safe Operating Area
= 25 °C
- Drain-to-Source Voltage (V)
DS(on)
1
*
BVDSS Limited
GS
at which R
I
DM
Limited
DS(on)
10
0.4
0.3
0.2
0.1
0.0
50
40
30
20
10
0
10
0
-4
is specified
On-Resistance vs. Gate-to-Source Voltage
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
-3
1
V
100
GS
10
Single Pulse Power
-2
- Gate-to-Source Voltage (V)
2
10
-1
Time (s)
S10-0547-Rev. C, 08-Mar-10
Document Number: 72232
I
D
= 2.7 A
1
3
10
4
100
600
5