SI5855DC-T1-E3 Vishay, SI5855DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5855DC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.7A I(D),LLCC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5855DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5855DC-T1-E3TR

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
8
6
4
2
0
0.0
0
0
V
I
D
DS
0.5
= 2.7 A
On-Resistance vs. Drain Current
= 10 V
1
2
V
1.0
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
GS
V
- Total Gate Charge (nC)
I
2
GS
D
1.5
= 2.5 V
Gate Charge
- Drain Current (A)
V
= 1.8 V
4
GS
2.0
= 5 V thru 3 V
3
6
2.5
4
V
3.0
GS
8
= 4.5 V
5
1.5 V
2.5 V
2 V
3.5
4.0
10
6
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 2.7 A
0.5
= 4.5 V
4
V
V
Transfer Characteristics
DS
0
GS
T
C
C
J
oss
iss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
25
Capacitance
8
1.5
50
Vishay Siliconix
12
75
T
Si5855DC
2.0
C
= - 55 °C
25 °C
www.vishay.com
100
16
2.5
125
125 °C
150
3.0
20
3