SI5855DC-T1-E3 Vishay, SI5855DC-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI5855DC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.7A I(D),LLCC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5855DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5855DC-T1-E3TR

Si5855DC
Vishay Siliconix
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Foot
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
b
a
a
a
a
a
Symbol
Symbol
R
V
I
t
t
J
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
I
C
g
V
t
rm
t
t
= 25 °C, unless otherwise noted
SD
rr
fs
gs
gd
r
f
F
T
g
J
= 25 °C, unless otherwise noted
Steady State
Steady State
t ≤ 5 s
V
DS
I
V
D
DS
≅ - 1 A, V
= - 10 V, V
I
F
= - 20 V, V
V
V
V
V
V
V
V
V
= - 0.9 A, dI/dt = 100 A/µs
V
DS
GS
GS
DS
I
V
DS
S
V
DD
I
DS
GS
DS
F
r
r
= - 0.9 A, V
Test Conditions
Test Conditions
≤ − 5 V, V
= 20 V, T
= V
= - 4.5 V, I
= - 2.5 V, I
= 1 A, T
= - 10 V, I
= 20 V, T
= - 20 V, V
= - 10 V, R
MOSFET
MOSFET
MOSFET
= - 1.8 V, I
= 0 V, V
Schottky
Schottky
Schottky
Device
GEN
V
V
GS
GS
I
F
r
r
GS
, I
= 20 V
= 10 V
= 1 A
= - 4.5 V, I
= - 4.5 V, R
J
D
= 0 V, T
J
GS
GS
J
= 125 °C
= - 250 µA
D
D
D
= 125 °C
GS
= 85 °C
GS
D
L
= - 2.7 A
= - 2.7 A
= - 2.2 A
= ± 8 V
= - 4.5 V
= - 1 A
= 10 Ω
= 0 V
= 0 V
J
D
Symbol
= 85 °C
g
= - 2.7 A
R
R
= 6 Ω
thJA
thJF
Typical
- 0.45
Min.
Min.
- 10
50
54
90
95
30
30
S10-0547-Rev. C, 08-Mar-10
0.095
0.137
0.205
0.255
Typ.
- 0.8
Typ.
0.34
0.05
5.1
1.2
1.0
16
30
30
27
20
10
90
7
2
Document Number: 72232
Maximum
110
115
60
65
40
40
± 100
0.110
0.160
0.240
0.375
0.290
0.500
Max.
Max.
- 1.0
- 1.2
100
7.7
- 1
- 5
25
45
45
40
40
20
°C/W
Unit
Unit
Unit
mA
nA
µA
nC
pF
ns
Ω
V
A
S
V
V