SI4936CDY-T1-GE3 Vishay, SI4936CDY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4936CDY-T1-GE3
• Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4936CDY-T1-GE3

• Module Configuration: Dual
• Transistor Polarity: Dual N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 33mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Power Dissipation: RoHS Compliant
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 5A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69097.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
0.02
0.05
-4
-4
0.1
0.2
Duty Cycle = 0.5
0.1
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
10
-3
0.02
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
0.05
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
S09-0390-Rev. C, 09-Mar-09
= P
t
2
Document Number: 69097
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 110 °C/W
1000
1
0