SI4936CDY-T1-GE3 Vishay, SI4936CDY-T1-GE3 Datasheet - Page 4
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SI4936CDY-T1-GE3
Manufacturer Part Number
SI4936CDY-T1-GE3
Description
DUAL N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI4936CDY-T1-GE3
Module Configuration
Dual
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
33mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Power Dissipation
RoHS Compliant
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.04Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
5A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4936CDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.3
T
V
J
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
I
D
0.9
= 250 µA
75
0.01
100
0.1
10
T
1
0.1
100
J
= 25 °C
1.2
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
125
A
GS
Limited by R
= 25 °C
> minimum V
V
DS
New Product
150
1.5
- Drain-to-Source Voltage (V)
1
DS(on)
GS
*
BVDSS Limited
at which R
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
8
4
0
is specified
0.001
0
100 µA
1 ms
10 ms
100 ms
1 s
10 s, DC
On-Resistance vs. Gate-to-Source Voltage
0.01
100
2
V
GS
- Gate-to-Source Voltage (V)
0.1
Single Pulse Power
4
Time (s)
S09-0390-Rev. C, 09-Mar-09
1
Document Number: 69097
6
10
T
T
J
J
= 125 °C
= 25 °C
8
100
1000
10