SI4936CDY-T1-GE3 Vishay, SI4936CDY-T1-GE3 Datasheet - Page 3
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SI4936CDY-T1-GE3
Manufacturer Part Number
SI4936CDY-T1-GE3
Description
DUAL N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI4936CDY-T1-GE3
Module Configuration
Dual
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
33mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Power Dissipation
RoHS Compliant
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.04Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
5A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4936CDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
0.06
0.05
0.04
0.03
0.02
20
15
10
10
5
0
8
6
4
2
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
= 5 A
1
0.5
V
DS
Output Characteristics
V
5
Q
DS
- Drain-to-Source Voltage (V)
g
I
D
= 15 V
- Total Gate Charge (nC)
2
Gate Charge
- Drain Current (A)
1.0
V
V
GS
GS
= 4.5 V
10
= 10 V
3
V
1.5
GS
= 10 V thru 4 V
V
4
DS
V
V
15
GS
GS
= 24 V
2.0
= 1 V, 2 V
= 3 V
5
New Product
2.5
20
6
400
300
200
100
1.7
1.5
1.3
1.1
0.9
0.7
5
4
3
2
1
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
5
V
V
DS
Transfer Characteristics
1
0
GS
T
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
T
C
T
25
Capacitance
C
C
= 125 °C
C
oss
= 25 °C
iss
V
GS
15
50
2
Vishay Siliconix
= 10 V; I
75
Si4936CDY
20
D
V
I
D
100
= 5 A
GS
T
3
= 4.7 A
www.vishay.com
C
= 4.5 V;
= - 55 °C
25
125
150
30
4
3