SI4936CDY-T1-E3 Vishay, SI4936CDY-T1-E3 Datasheet

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SI4936CDY-T1-E3

Manufacturer Part Number
SI4936CDY-T1-E3
Description
MOSFET 2N-CH 30V 5.8A SO8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4936CDY-T1-E3

Input Capacitance (ciss) @ Vds
325pF @ 15V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Power - Max
2.3W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4936CDY-T1-E3
Manufacturer:
VISHAY
Quantity:
180
Part Number:
SI4936CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
d. Based on T
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
30
(V)
C
= 25 °C.
S
G
S
G
0.050 at V
0.040 at V
1
2
1
2
1
2
3
4
R
DS(on)
GS
GS
Top View
SO-8
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
a, c
Dual N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
D
D
5.8
5.5
D
D
(A)
1
1
2
2
Steady State
d
t ≤ 10 s
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
2.8 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
FEATURES
APPLICATIONS
G
stg
• Halogen-free According to IEC 61249-2-21
• Low Current DC/DC Conversion
• Notebook System Power
1
Definition
TrenchFET
N-Channel MOSFET
Typical
D
S
1
58
42
1
®
Power MOSFET
- 55 to 150
5.0
4.0
1.4
1.7
1.1
Limit
± 20
5.8
4.6
1.9
2.3
1.5
30
20
a, b
a, b
a, b
a, b
a, b
Maximum
75
55
G
Vishay Siliconix
2
Si4936CDY
N-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
°C
W
V
A
1

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SI4936CDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si4936CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 69097 S09-0390-Rev. C, 09-Mar-09 New Product thru 2.0 2.5 400 300 200 100 1.7 1.5 1 1.1 0.9 0 Si4936CDY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 4.5 V ...

Page 4

... Si4936CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.3 2.1 1 1.7 1.5 1.3 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0.08 0. °C J 0.04 0.02 0.00 1 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4936CDY Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4936CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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