SI4936CDY-T1-GE3 Vishay, SI4936CDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4936CDY-T1-GE3
• Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4936CDY-T1-GE3

• Module Configuration: Dual
• Transistor Polarity: Dual N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 33mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Power Dissipation: RoHS Compliant
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 5A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
8
6
4
2
0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
New Product
T
150
C
50
Current Derating*
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
150
25
Power, Junction-to-Ambient
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4936CDY
100
www.vishay.com
125
150
5