SI4542DY-T1-E3 Vishay, SI4542DY-T1-E3 Datasheet - Page 6
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SI4542DY-T1-E3
Manufacturer Part Number
SI4542DY-T1-E3
Description
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,6.1A I(D),SO
Manufacturer
Vishay
Datasheet
1.SI4542DY-T1-E3.pdf
(7 pages)
Specifications of SI4542DY-T1-E3
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.9 A @ N Channel or 6.1 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4542DY-T1-E3
Manufacturer:
ON
Quantity:
1 600
Part Number:
SI4542DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4542DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70666.
www.vishay.com
6
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
40
10
- 50
1
0.01
0.1
0
2
1
- 25
10 -
Source-Drain Diode Forward Voltage
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.3
0
V
I
SD
D
T
= 250 µA
Threshold Voltage
T
- Source-to-Drain Voltage (V)
J
25
J
- Temperature (°C)
= 150 °C
Single Pulse
0.6
50
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.9
T
J
100
= 25 °C
1.2
125
10 -
150
2
1.5
Square Wave Pulse Duration (s)
10 -
1
0.20
0.16
0.12
0.08
0.04
0.00
30
25
20
15
10
5
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.10
- Gate-to-Source Voltage (V)
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
4
JM
I
Time (s)
D
-
S09-0868-Rev. G, 18-May-09
= 6.1 A
T
t
1
A
= P
Document Number: 70666
1.00
t
2
DM
6
Z
thJA
thJA
t
t
1
2
(t)
10
= 62.5 °C/W
8
10.00
30
10