SI4542DY-T1-E3 Vishay, SI4542DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4542DY-T1-E3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,6.1A I(D),SO
• Manufacturer: Vishay

Specifications of SI4542DY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A @ N Channel or 6.1 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 70666
S09-0868-Rev. G, 18-May-09
0.05
0.04
0.03
0.02
0.01
0.00
40
32
24
16
10
8
0
8
6
4
2
0
0.0
0
0
V
I
0.5
D
DS
= 6.9 A
On-Resistance vs. Drain Current
= 15 V
6
V
1.0
DS
10
Q
Output Characteristics
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
V
D
GS
1.5
- Drain Current (A)
Gate Charge
12
= 10 V thru 5 V
2.0
20
V
V
GS
GS
18
2.5
= 4.5 V
= 10 V
3.0
30
24
4 V
3 V
3.5
4.0
30
40
3000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 6.9 A
C
5
rss
V
= 10 V
C
1
C
DS
V
iss
oss
Transfer Characteristics
GS
0
T
- Drain-to-Source Voltage (V)
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
10
T
25
Capacitance
25 °C
C
2
= 125 °C
15
50
Vishay Siliconix
3
75
Si4542DY
20
www.vishay.com
100
- 55 °C
4
25
125
150
30
5
3