SI4542DY-E3 Vishay/Siliconix, SI4542DY-E3 Datasheet
SI4542DY-E3
Specifications of SI4542DY-E3
Related parts for SI4542DY-E3
SI4542DY-E3 Summary of contents
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... Top View Ordering Information: Si4542DY -T1-E3 (Lead (Pb)-free) Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si4542DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70666 S09-0868-Rev. G, 18-May- 2.5 3.0 3.5 4 Si4542DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 3000 2500 C iss 2000 ...
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... Si4542DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com ° ...
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... Gate Charge Document Number: 70666 S09-0868-Rev. G, 18-May- thru 2.5 3.0 3.5 4.0 3200 2400 1600 Si4542DY Vishay Siliconix ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 800 C oss ...
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... Si4542DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 150 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 µA D 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...
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... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...
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Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...