SI4542DY-T1-E3 Vishay, SI4542DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4542DY-T1-E3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,6.1A I(D),SO
• Manufacturer: Vishay

Specifications of SI4542DY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A @ N Channel or 6.1 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 70666
S09-0868-Rev. G, 18-May-09
0.10
0.08
0.06
0.04
0.02
0.00
40
32
24
16
10
8
0
8
6
4
2
0
0.0
0
0
0.5
V
I
D
DS
On-Resistance vs. Drain Current
= 6.1 A
V
8
= 15 V
7
V
DS
1.0
GS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
= 4.5 V
g
- Total Gate Charge (nC)
I
1.5
D
Gate Charge
16
14
- Drain Current (A)
2.0
V
GS
= 10 V thru 5 V
24
21
2.5
V
GS
3.0
= 10 V
32
28
2, 1 V
3.5
4 V
3 V
4.0
40
35
3200
2400
1600
1.75
1.50
1.25
1.00
0.75
0.50
800
40
32
24
16
0
8
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 6.1 A
V
6
= 10 V
DS
1
Transfer Characteristics
V
0
C
GS
- Drain-to-Source Voltage (V)
oss
T
- Gate-to-Source Voltage (V)
J
25
Capacitance
- Junction Temperature (°C)
12
2
50
Vishay Siliconix
C
iss
18
T
3
75
C
Si4542DY
25 °C
= - 55 °C
www.vishay.com
100
24
4
125
125 °C
150
30
5
5