SI4542DY-T1-E3 Vishay, SI4542DY-T1-E3 Datasheet - Page 2
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SI4542DY-T1-E3
Manufacturer Part Number
SI4542DY-T1-E3
Description
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,6.1A I(D),SO
Manufacturer
Vishay
Datasheet
1.SI4542DY-T1-E3.pdf
(7 pages)
Specifications of SI4542DY-T1-E3
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.9 A @ N Channel or 6.1 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4542DY-T1-E3
Manufacturer:
ON
Quantity:
1 600
Part Number:
SI4542DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4542DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
Q
R
t
t
t
SD
rr
fs
gs
gd
r
f
rr
g
g
V
V
DS
I
V
V
D
DS
I
DS
DS
D
≅ - 1 A, V
= - 15 V, V
I
I
I
F
I
F
≅ 1 A, V
= - 30 V, V
F
F
V
V
= 15 V, V
V
V
V
V
= 30 V, V
V
V
V
= - 1.7 A, dI/dt = 100 A/µs
= - 1.7 A, dI/dt = 100 A/µs
V
GS
I
V
DS
V
V
V
V
= 1.7 A, dI/dt = 100 A/µs
= 1.7 A, dI/dt = 100 A/µs
DS
GS
DS
DS
I
S
DD
DS
DS
GS
S
DD
DS
DS
GS
DS
= - 1.7 A, V
= 1.7 A, V
= V
= - 4.5 V, I
≤ - 5 V, V
= - 10 V, I
= - 15 V, I
= 0 V, V
= V
= - 30 V, V
= - 15 V, R
= 4.5 V, I
= 30 V, V
≥ 5 V, V
= 15 V, R
= 10 V, I
= 15 V, I
N-Channel
N-Channel
P-Channel
GEN
P-Channel
GEN
GS
Test Conditions
GS
GS
GS
GS
GS
, I
, I
= - 10 V, I
= 10 V, R
= - 10 V, R
= 10 V, I
D
= 0 V, T
GS
D
= 0 V, T
GS
GS
= - 250 µA
D
D
D
D
GS
D
D
= 250 µA
GS
GS
L
GS
L
= ± 20 V
= 6.9 A
= - 6.1 A
= 6.9 A
= - 6.1 A
= 5.8 A
= - 5.1 A
= 10 V
= - 10 V
= 10 Ω
= 0 V
= 10 Ω
= 0 V
= 0 V
= 0 V
J
D
J
D
g
= 55 °C
= 55 °C
= 6.9 A
g
= 6 Ω
= - 6.1 A
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 1.0
- 20
1.0
0.5
20
2
S09-0868-Rev. G, 18-May-09
0.020
0.026
0.026
0.036
Document Number: 70666
Typ.
7.5
7.0
3.5
5.0
25
16
30
32
12
10
10
10
60
55
15
25
50
50
45
55
2
4
± 100
± 100
0.025
0.032
0.035
0.045
Max.
- 1.2
- 25
1.2
3.4
6.8
- 1
25
50
50
20
20
20
20
90
80
30
40
90
90
1
Unit
nA
µA
nC
nC
ns
Ω
Ω
V
A
S
V