SI1406DH-T1-E3 Vishay, SI1406DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1406DH-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.1A I(D),SOT-363
• Manufacturer: Vishay

Specifications of SI1406DH-T1-E3

• Rohs Compliant: YES
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si1406DH
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?70684.
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
−0.0
−0.1
−0.2
−0.3
−0.4
0.2
0.1
0.01
0.01
0.1
−50
0.1
2
1
2
1
10
10
−4
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
Single Pulse
− Temperature (_C)
25
10
−3
50
10
I
D
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
For related documents such as package/tape drawings, part marking, and reliability data, see
−2
10
−1
10
1
−1
30
25
20
15
10
0.001
5
0
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
0.1
− T
t
A
1
Time (sec)
1
= P
t
2
DM
1
Z
thJA
thJA
100
S-50366—Rev. B, 28-Feb-05
t
t
1
2
(t)
Document Number: 70684
=100_C/W
10
600
100
10
600