SI1406DH-T1 Vishay/Siliconix, SI1406DH-T1 Datasheet

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SI1406DH-T1

Manufacturer Part Number
SI1406DH-T1
Description
MOSFET 20V 3.9A 1.0W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1406DH-T1

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.1 A
Resistance Drain-source Rds (on)
0.065 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
47 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Rise Time
47 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
54 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1406DH-T1
Manufacturer:
SILICONIX
Quantity:
7 082
Part Number:
SI1406DH-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1406DH-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 70684
S10-0935-Rev. C, 19-Apr-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
(V)
0.065 at V
0.075 at V
0.096 at V
R
DS(on)
J
a
= 150 °C)
GS
GS
GS
a
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
N-Channel 20 V (D-S) MOSFET
G
Ordering Information: Si1406DH-T1-E3 (Lead (Pb)-free)
D
D
a
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
a
A
I
= 25 °C, unless otherwise noted
D
3.9
3.6
3.2
Steady State
Steady State
(A)
T
T
T
T
Si1406DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
6
5
4
D
D
S
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
• PA Switch
• Level Switch
Symbol
Symbol
Marking Code
T
AB
R
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
XX
Part # Code
Lot Traceability
and Date Code
®
Power MOSFETs: 1.8 V Rated
Typical
1.56
0.81
100
5 s
3.9
2.8
1.4
60
34
- 55 to 150
± 8
20
10
Steady State
Maximum
0.52
125
3.1
2.2
0.9
1.0
80
45
Vishay Siliconix
Si1406DH
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1406DH-T1 Summary of contents

Page 1

... Load Switching • PA Switch • Level Switch SOT-363 SC-70 (6-LEADS Marking Code Part # Code Top View Si1406DH-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...

Page 2

... Si1406DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 70684 S10-0935-Rev. C, 19-Apr 0.20 0.16 0.12 0. °C J 0.04 0.00 0.8 1.0 1.2 Si1406DH Vishay Siliconix 800 600 C iss 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.6 1 ...

Page 4

... Si1406DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 0 250 µA D 0.0 - 0.1 - 0.2 - 0 Junction Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

- - Document Number: 71154 06-Jul-01 Package Information Dim Min Nom Max A 0.90 – A – – 0.80 ...

Page 6

... BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the basic pad layout and dimensions. These pad patterns are sufficient for the low to medium power applications for which this package is intended ...

Page 7

AN815 Vishay Siliconix Front of Board SC70-6 THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the ...

Page 8

Alloy 42 160 Time (Secs) FIGURE 4. Leadframe Comparison on EVB Document Number: 71334 12-Dec-03 250 200 150 100 Copper ...

Page 9

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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