SI1406DH-T1-E3 Vishay, SI1406DH-T1-E3 Datasheet

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... Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70684 S-50366—Rev. B, 28-Feb-05 I (A) D 3.9 3.6 3.2 SOT-363 SC-70 (6-LEADS Marking Code Top View Ordering Information: Si1406DH-T1 Si1406DH-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 85_C 25_C ...

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... Si1406DH Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

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... T 0.1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Document Number: 70684 S-50366—Rev. B, 28-Feb 25_C J 0.8 1.0 1.2 Si1406DH Vishay Siliconix Capacitance 800 600 C iss 400 200 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

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... Si1406DH Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0 250 mA D −0.0 −0.1 −0.2 −0.3 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − ...

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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...