SI1406DH-T1-E3 Vishay, SI1406DH-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1406DH-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.1A I(D),SOT-363
• Manufacturer: Vishay

Specifications of SI1406DH-T1-E3

• Rohs Compliant: YES
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si1406DH
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain Source On State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
− Drain-to-Source Voltage (V)
a
V
GS
1.5
= 5 thru 2 V
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
2.5
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
3.0
DSS
DSS
Q
g
t
SD
t
t
rr
fs
gs
gd
r
f
g
1 V
1.5 V
3.5
4.0
V
I
V
D
DS
DS
DS
^ 0.5 A, V
V
= 10 V, V
= 20 V, V
I
V
DS
V
V
V
F
V
V
V
V
V
I
DS
Test Condition
GS
DS
GS
S
DS
DD
DD
= 1.4 A. di/dt = 100/ms
DS
GS
= 0 V, V
= 1.4 A, V
= V
= 5 V, V
,
= 2.5 V, I
= 20 V, V
= 4.5 V, I
= 10 V, R
= 10 V, R
= 10 V, I
= 1.8 V, I
GEN
GS
GS
GS
GS
, I
GS
= 4.5 V, I
= 0 V, T
= 4.5 V, R
D
GS
D
GS
D
D
GS
= 250 mA
L
L
= "8 V
D
= 3.9 A
= 3.9 A
= 3.6 A
= 4.5 V
= 20 W
= 20 W
= 2 A
= 0 V
= 0 V
,
J
D
D
= 85_C
10
g
g
= 3.9 A
8
6
4
2
0
= 6 W
0.0
0.5
V
GS
T
Transfer Characteristics
25_C
C
− Gate-to-Source Voltage (V)
Min
0.45
= 125_C
8
1.0
0.053
0.062
0.079
Typ
0.75
0.95
4.9
1.0
11
27
47
54
29
35
S-50366—Rev. B, 28-Feb-05
−55_C
1.5
Document Number: 70684
"100
Max
0.065
0.075
0.096
1.2
1.1
7.5
41
71
81
44
60
1
5
2.0
Unit
nA
mA
mA
nC
ns
ns
V
A
W
W
S
V
2.5