SI1406DH Vishay Siliconix, SI1406DH Datasheet

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SI1406DH

Manufacturer Part Number
SI1406DH
Description
N-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1406DH-T1
Manufacturer:
SILICONIX
Quantity:
7 082
Part Number:
SI1406DH-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1406DH-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.DataSheet4U.com
Notes
a.
Document Number: 70684
S-50366—Rev. B, 28-Feb-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
20
(V)
J
ti
t A bi
0.075 @ V
0.096 @ V
J
J
a
a
0.065 @ V
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
GS
GS
GS
a
a
G
D
D
= 2.5 V
= 1.8 V
(W)
= 4.5 V
N-Channel 20-V (D-S) MOSFET
a
1
2
3
SC-70 (6-LEADS)
Ordering Information: Si1406DH-T1
SOT-363
Top View
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 5 sec
I
6
5
4
A
A
A
A
D
3.9
3.6
3.2
= 25_C
= 85_C
= 25_C
= 85_C
(A)
D
D
S
Si1406DH-T1—E3 (Lead (Pb)-Free)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
Marking Code
I
I
I
GS
DS
D
D
S
D
D
stg
AB
FEATURES
D TrenchFETr Power MOSFETS
D 1.8-V Rated
D Thermally Enhanced SC-70
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
XX
Part # Code
Package
Typical
Lot Traceability
and Date Code
5 secs
1.56
0.81
100
3.9
2.8
1.4
60
34
−55 to 150
"8
20
10
Steady State
Maximum
Vishay Siliconix
0.52
125
3.1
2.2
0.9
1.0
80
45
Si1406DH
www.vishay.com
Unit
Unit
Available
_C/W
Pb-free
_C
C/W
W
W
V
V
A
A
1

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SI1406DH Summary of contents

Page 1

... D = 4.5 V 3.9 = 2.5 V 3.6 = 1.8 V 3.2 SOT-363 SC-70 (6-LEADS Top View Ordering Information: Si1406DH-T1 Si1406DH-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED) A Symbol T = 25_C 85_C 25_C 85_C A T Symbol sec Steady State Steady State Vishay Siliconix ...

Page 2

... Si1406DH www.DataSheet4U.com Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 70684 S-50366—Rev. B, 28-Feb 25_C J 0.8 1.0 1.2 Si1406DH Vishay Siliconix Capacitance 800 600 C iss 400 200 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...

Page 4

... Si1406DH www.DataSheet4U.com Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0.1 −0.0 −0.1 −0.2 −0.3 −0.4 −50 − − Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...

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