BLF6G10LS-160RN:11 NXP Semiconductors, BLF6G10LS-160RN:11 Datasheet - Page 9

• Manufacturer Part Number: BLF6G10LS-160RN:11
• Description: BLF6G10LS-160RN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160RN:11

• Transistor Type: LDMOS
• Frequency: 922.5MHz
• Gain: 22.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1.2A
• Voltage - Test: 32V
• Power - Output: 32W
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 39A
• Drain Source Voltage (max): 65V
• Output Power (max): 32W
• Power Gain (typ)@vds: 22.5@32VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13.5S
• Drain Source Resistance (max): 70(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 4.2@32VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063282118

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G10-160RN_10LS-160RN_2
Product data sheet
Document ID
BLF6G10-160RN_10LS-160RN_2 20100121
Modifications:
BLF6G10-160RN_10LS-160RN_1 20090120
Revision history
Table 9.
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
GSM
LDMOS
LDMOST
PAR
PDPCH
RF
SMD
VSWR
W-CDMA
Release date Data sheet status Change notice Supersedes
Abbreviations
•
•
•
•
Section 1.1 “General description”
from 800 MHz.
Section 1.2 “Features”
Section 1.3 “Applications”
800 MHz.
Section 12 “Legal information”
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 02 — 21 January 2010
Product data sheet -
Product data sheet -
lower frequency range extended to 700 MHz from 800 MHz.
lower frequency range extended to 700 MHz from
export control disclaimer added.
lower frequency range extended to 700 MHz
BLF6G10(LS)-160RN
BLF6G10-160RN_10LS-160RN_1
-
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
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