BLF6G10LS-160RN:11 NXP Semiconductors, BLF6G10LS-160RN:11 Datasheet - Page 5
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BLF6G10LS-160RN:11
Manufacturer Part Number
BLF6G10LS-160RN:11
Description
BLF6G10LS-160RN/LDMOST/REEL13/
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10LS-160RN11.pdf
(11 pages)
Specifications of BLF6G10LS-160RN:11
Transistor Type
LDMOS
Frequency
922.5MHz
Gain
22.5dB
Voltage - Rated
65V
Current Rating
39A
Current - Test
1.2A
Voltage - Test
32V
Power - Output
32W
Package / Case
SOT502B
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
39A
Drain Source Voltage (max)
65V
Output Power (max)
32W
Power Gain (typ)@vds
22.5@32VdB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13.5S
Drain Source Resistance (max)
70(Typ)@6.15Vmohm
Reverse Capacitance (typ)
4.2@32VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
27%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934063282118
NXP Semiconductors
8. Test information
BLF6G10-160RN_10LS-160RN_2
Product data sheet
Fig 4.
Fig 6.
(dB)
G
p
24
23
22
21
20
19
input
50 Ω
0
V
f
efficiency as functions of average load power;
typical values
Test circuit for operation at 900 MHz
2-carrier W-CDMA power gain and drain
2
DS
= 957.5 MHz; carrier spacing 5 MHz.
= 32 V; I
7.4 2-carrier W-CDMA
V
C1
Dq
GG
20
= 1200 mA; f
G
η
D
p
C15
R1
C14
1
40
= 952.5 MHz;
C12
P
L(AV)
C10
001aaj516
(W)
C8
Rev. 02 — 21 January 2010
60
50
40
30
20
10
0
C2
(%)
η
D
C6
Fig 5.
ACPR
(dBc)
−20
−40
−60
−80
C3
0
0
V
f
2-carrier W-CDMA adjacent channel power
ratio as function of average load power;
typical values
2
DS
= 957.5 MHz; carrier spacing 5 MHz.
BLF6G10(LS)-160RN
C5
= 32 V; I
C7
Dq
20
= 1200 mA; f
C9
C11
C13
Power LDMOS transistor
R2
L1
1
40
= 952.5 MHz;
P
C4
C16
L(AV)
© NXP B.V. 2010. All rights reserved.
001aah479
V
001aah480
DD
(W)
output
50 Ω
60
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