BLF6G10LS-160RN:11 NXP Semiconductors, BLF6G10LS-160RN:11 Datasheet - Page 6

• Manufacturer Part Number: BLF6G10LS-160RN:11
• Description: BLF6G10LS-160RN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160RN:11

• Transistor Type: LDMOS
• Frequency: 922.5MHz
• Gain: 22.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1.2A
• Voltage - Test: 32V
• Power - Output: 32W
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 39A
• Drain Source Voltage (max): 65V
• Output Power (max): 32W
• Power Gain (typ)@vds: 22.5@32VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13.5S
• Drain Source Resistance (max): 70(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 4.2@32VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063282118

NXP Semiconductors
Table 8.
All capacitors should be soldered vertically.
[1]
[2]
BLF6G10-160RN_10LS-160RN_2
Product data sheet
Component
C1, C2, C3, C4
C5, C6
C7, C8
C9, C10
C11, C12
C13
C14
C15
C16
L1
R1
R2
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
List of components (see
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD tantalum capacitor
electrolytic capacitor
ferrite SMD bead
SMD resistor
SMD resistor
Fig 7.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
and thickness = 0.76 mm.
See
Component layout
C1
C15
Figure 6
Table 8
C14
R1
for list of components.
and
Rev. 02 — 21 January 2010
Figure
68 pF
560 pF
2.20 pF
-
Value
330 nF; 50 V
1.5 μF; 50 V
4.5 μF; 50 V
2.7 pF
47 μF; 20 V
220 μF
4.7 Ω; 0.1 W
6.8 Ω; 0.1 W
C12
7)
C10
C8
C2
C6
BLF6G10(LS)-160RN
[1]
[1]
[2]
[2]
[2]
[1]
[1]
Remarks
Ferroxcube BDS 3/3/8.9-4S2 or equivalent
C5 C9
C7 C11
C3
R2
L1
Power LDMOS transistor
−
+
C16
© NXP B.V. 2010. All rights reserved.
C13
001aah481
C4
r
= 3.5
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