PBSS4021PT NXP Semiconductors, PBSS4021PT Datasheet - Page 7

• Manufacturer Part Number: PBSS4021PT
• Description: TRANSISTOR,NPN,20V,3.5A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021PT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -20V
• Power Dissipation Pd: 390mW
• Dc Collector Current: -3.5A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No.: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
PBSS4021PT_1
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.6
BE
−1.2
−0.8
−0.4
600
400
200
0.0
−10
−10
0
V
DC current gain as a function of collector
current; typical values
V
current; typical values
Base-emitter voltage as a function of collector
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
−10
−10
2
2
−10
−10
006aac004
006aac002
3
I
3
I
C
C
(mA)
(mA)
−10
−10
Rev. 01 — 29 January 2010
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
−5.0
C
−4.0
−3.0
−2.0
−1.0
−1.5
−1.1
−0.7
−0.3
0.0
−10
0.0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
20 V, 3.5 A PNP low V
C
−1
amb
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1.0
−1
(1)
(2)
(3)
−2.0
I
−10
B
(mA) = −50
PBSS4021PT
−10
−10
−40
−30
−20
−3.0
2
CEsat
−5
−10
−4.0
−15
© NXP B.V. 2010. All rights reserved.
−45
−35
−25
(BISS) transistor
006aac003
006aac005
V
3
I
C
CE
(mA)
(V)
−10
−5.0
4
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