PBSS4021PT NXP Semiconductors, PBSS4021PT Datasheet - Page 4

• Manufacturer Part Number: PBSS4021PT
• Description: TRANSISTOR,NPN,20V,3.5A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021PT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -20V
• Power Dissipation Pd: 390mW
• Dc Collector Current: -3.5A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No.: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
6. Thermal characteristics
PBSS4021PT_1
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
10
−1
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
duty cycle = 1
0
0.75
0.33
0.1
0.02
10
0.05
0.01
−4
0.5
0.2
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
10
−3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
10
Rev. 01 — 29 January 2010
−2
10
−1
2
O
3
, standard footprint.
Conditions
in free air
20 V, 3.5 A PNP low V
1
10
[1]
[2]
[3]
Min
-
-
-
-
PBSS4021PT
CEsat
10
Typ
-
-
-
-
2
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
p
006aab955
(s)
Max
320
190
115
62
10
3
2
.
Unit
K/W
K/W
K/W
K/W
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