PBSS4021PT NXP Semiconductors, PBSS4021PT Datasheet - Page 6

• Manufacturer Part Number: PBSS4021PT
• Description: TRANSISTOR,NPN,20V,3.5A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021PT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -20V
• Power Dissipation Pd: 390mW
• Dc Collector Current: -3.5A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No.: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
7. Characteristics
PBSS4021PT_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
t
t
t
t
t
t
f
V
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 01 — 29 January 2010
V
Conditions
V
V
T
V
V
V
I
V
V
V
V
I
I
I
I
I
I
I
I
V
V
I
I
I
f = 100 MHz
I
C
C
C
C
C
C
C
C
C
C
Boff
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 °C
= −500 mA
= −1 A; I
= −1 A; I
= −2 A; I
= −4 A; I
= −4 A; I
= −4 A; I
= −1 A; I
= −4 A; I
= −1 A; I
= −100 mA;
= i
= 0.05 A
= −20 V; I
= −20 V; I
= −16 V; V
= −5 V; I
= −2 V;
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −10 V;
= −10 V;
= −12.5 V;
e
= 0 A; f = 1 MHz
Bon
B
B
B
B
B
B
B
B
C
= −50 mA
= −10 mA
= −40 mA
= −200 mA
= −400 mA
= −400 mA
= −100 mA
= −400 mA
C
C
C
C
C
E
E
= −0.05 A;
= 0 A
20 V, 3.5 A PNP low V
= −1 A
= −2 A
= −4 A
= −6 A
= −2 A
BE
= 0 A
= 0 A;
= 0 V
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
250
200
140
60
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS4021PT
Typ
-
-
-
-
400
320
220
100
50
−70
−115
−160
−250
−220
55
−0.89
−1.1
−0.83
10
340
120
460
155
40
CEsat
60
70
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
−100
−55
−100
−100
-
-
-
-
-
−105
−170
−240
−375
−330
82.5
−1.0
−1.2
−0.9
-
-
-
-
-
-
-
-
ns
ns
Unit
nA
μA
nA
nA
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
ns
MHz
pF
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