PBSS4021PT NXP Semiconductors, PBSS4021PT Datasheet - Page 2

• Manufacturer Part Number: PBSS4021PT
• Description: TRANSISTOR,NPN,20V,3.5A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021PT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -20V
• Power Dissipation Pd: 390mW
• Dc Collector Current: -3.5A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No.: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS4021PT_1
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
PBSS4021PT
Type number
PBSS4021PT
Symbol
V
V
V
I
I
I
C
CM
B
CBO
CEO
EBO
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
base
emitter
collector
Description
Package
Name
-
Rev. 01 — 29 January 2010
Description
plastic surface-mounted package; 3 leads
open emitter
open base
open collector
Conditions
single pulse;
t
p
≤ 1 ms
20 V, 3.5 A PNP low V
Marking code
*BJ
Simplified outline
1
[1]
3
PBSS4021PT
-
-
-
Min
-
-
-
2
CEsat
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
−20
−20
−5
−3.5
−8
−1
(BISS) transistor
1
sym013
Version
SOT23
Unit
V
V
V
A
A
A
3
2
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