PBSS4041SPN NXP Semiconductors, PBSS4041SPN Datasheet - Page 9

• Manufacturer Part Number: PBSS4041SPN
• Description: TRANSISTOR,NPN/PNP,60V,SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SPN

• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 60V
• Dc Collector Current: 6.7A
• Transistor Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-201
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS4041SPN
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
800
600
400
200
1.4
1.0
0.6
0.2
0
10
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= 2 V
= 2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
10
10
3
3
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10
10
006aac350
006aac352
I
I
4
4
C
C
(mA)
(mA)
10
10
Rev. 2 — 20 October 2010
5
5
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
16.0
C
12.0
8.0
4.0
0.0
1.6
1.2
0.8
0.4
0.0
10
0.0
T
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
I
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
−1
C
amb
amb
amb
amb
60 V NPN/PNP low V
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
1
1.0
10
2.0
(1)
(2)
(3)
PBSS4041SPN
10
2
I
B
(mA) = 300
3.0
CEsat
10
3
240
180
120
60
© NXP B.V. 2010. All rights reserved.
4.0
(BISS) transistor
10
006aac351
006aac353
V
I
4
CE
C
270
210
150
90
30
(mA)
(V)
10
5.0
5
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