PBSS4041SPN NXP Semiconductors, PBSS4041SPN Datasheet
PBSS4041SPN
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PBSS4041SPN Summary of contents
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... Product profile 1.1 General description NPN/PNP low V medium power Surface-Mounted Device (SMD) plastic package. Table 1. Type number PBSS4041SPN 1.2 Features and benefits Very low collector-emitter saturation voltage V High collector current capability I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1 ...
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... CEsat [1] Pulse test Pinning information Table 3. Pin Ordering information Table 4. Type number PBSS4041SPN SO8 4. Marking Table 5. Type number PBSS4041SPN PBSS4041SPN Product data sheet Quick reference data …continued Parameter Conditions transistor CEsat collector-emitter voltage open base collector current peak collector current single pulse − ...
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... T amb total power dissipation T amb junction temperature ambient temperature storage temperature O , standard footprint All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V (BISS) transistor CEsat Min Max - 6.7 −5 ≤ ...
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... O , standard footprint All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat 006aac346 25 75 125 175 T (°C) amb 2 Min ...
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... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041SPN Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V (BISS) transistor CEsat 006aac347 (s) p 006aac348 (s) p © ...
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... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041SPN Product data sheet −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V (BISS) transistor CEsat 006aac349 (s) p © ...
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... Bon rise time turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat Min Typ = [1] 300 ...
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... V; I transition frequency 100 MHz = − collector capacitance MHz ≤ 300 μs; δ ≤ 0.02. p All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat Min Typ = ...
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... V BEsat ( (mA) C (1) T (2) T (3) T Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat I (mA) = 300 B 240 180 120 8.0 4.0 0.0 0.0 1.0 2.0 3 °C T amb TR1 (NPN): Collector current as a function of collector-emitter voltage ...
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... Fig 10. TR1 (NPN): Collector-emitter saturation 006aac356 10 R CEsat (Ω) 10 (1) ( (mA) C (1) I (2) I (3) I Fig 12. TR1 (NPN): Collector-emitter saturation All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat 1 −1 (1) (2) −2 (3) −3 − °C T amb /I = 100 ...
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... Fig 14. TR2 (PNP): Collector current as a function of 006aac360 −10 2 −10 3 − (mA) C Fig 16. TR2 (PNP): Base-emitter saturation voltage as All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat −10.0 (mA) = −120 (A) −96 −8.0 −72 −48 − ...
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... Fig 18. TR2 (PNP): Collector-emitter saturation 006aac364 (1) (3) (2) −10 2 −10 3 − (mA) C Fig 20. TR2 (PNP): Collector-emitter saturation All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat −1 V CEsat (V) −1 −10 (1) (2) −2 (3) −10 −3 −10 −1 − ...
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... Fig 22. TR1 (NPN): Test circuit for switching times PBSS4041SPN Product data sheet (probe) oscilloscope 450 Ω 12 0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 Ω DUT mlb826 = − ...
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... PBSS4041SPN Product data sheet (probe) oscilloscope 450 Ω −12 − −0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V CEsat − I (100 %) Bon − I Boff off (probe) o oscilloscope 450 Ω DUT mgd624 = 0 ...
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... Dimensions in mm Packing methods Package Description SOT96 pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V (BISS) transistor CEsat 1.75 1.0 0.4 0.49 0.25 0.36 0.19 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V (BISS) transistor CEsat 1.30 4.00 6.60 7.00 1.27 (6×) Dimensions in mm enlarged solder land 1 ...
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... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PBSS4041SPN v.2 20101020 • Modifications: Figure 1 “Per device: Power derating PBSS4041SPN v.1 20100714 PBSS4041SPN Product data sheet 60 V NPN/PNP low V Data sheet status Product data sheet curves”: updated. Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved. ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 October 2010 PBSS4041SPN 60 V NPN/PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ...
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... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 20 October 2010 Document identifier: PBSS4041SPN ...