PBSS4041SPN NXP Semiconductors, PBSS4041SPN Datasheet - Page 12

• Manufacturer Part Number: PBSS4041SPN
• Description: TRANSISTOR,NPN/PNP,60V,SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SPN

• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 60V
• Dc Collector Current: 6.7A
• Transistor Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-201
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS4041SPN
Product data sheet
Fig 17. TR2 (PNP): Collector-emitter saturation
Fig 19. TR2 (PNP): Collector-emitter saturation
V
R
CEsat
−10
−10
CEsat
(Ω)
(V)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
10
−1
−1
−2
−1
−2
−10
−10
1
3
2
I
voltage as a function of collector current;
typical values
I
resistance as a function of collector current;
typical values
C
C
−1
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
−1
−1
−10
−10
−10
−10
(1)
(2)
2
2
(3)
−10
−10
(1)
(3)
(2)
All information provided in this document is subject to legal disclaimers.
006aac362
006aac364
3
I
3
I
C
C
(mA)
(mA)
−10
−10
Rev. 2 — 20 October 2010
4
4
Fig 18. TR2 (PNP): Collector-emitter saturation
Fig 20. TR2 (PNP): Collector-emitter saturation
R
V
−10
−10
−10
CEsat
CEsat
(Ω)
(V)
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
T
voltage as a function of collector current;
typical values
T
resistance as a function of collector current;
typical values
C
C
C
C
C
C
−1
−1
amb
amb
60 V NPN/PNP low V
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
−1
−1
(1)
(2)
(3)
−10
−10
PBSS4041SPN
(1)
(2)
(3)
−10
−10
2
2
CEsat
−10
−10
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
006aac363
006aac365
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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