PBSS4041SPN NXP Semiconductors, PBSS4041SPN Datasheet - Page 10

• Manufacturer Part Number: PBSS4041SPN
• Description: TRANSISTOR,NPN/PNP,60V,SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SPN

• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 60V
• Dc Collector Current: 6.7A
• Transistor Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-201
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS4041SPN
Product data sheet
Fig 9.
Fig 11. TR1 (NPN): Collector-emitter saturation
V
R
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
10
−1
−2
−3
−1
−2
1
1
10
3
2
10
I
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
I
resistance as a function of collector current;
typical values
−1
C
−1
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
10
10
10
10
2
2
(3)
(1)
(2)
10
10
(1)
(2)
(3)
3
3
All information provided in this document is subject to legal disclaimers.
10
10
006aac354
006aac356
I
I
4
4
C
C
(mA)
(mA)
10
10
Rev. 2 — 20 October 2010
5
5
Fig 10. TR1 (NPN): Collector-emitter saturation
Fig 12. TR1 (NPN): Collector-emitter saturation
R
V
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
10
−1
−2
−3
−1
−2
1
1
10
3
2
10
T
voltage as a function of collector current;
typical values
T
resistance as a function of collector current;
typical values
−1
C
C
C
−1
C
C
C
amb
amb
60 V NPN/PNP low V
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
PBSS4041SPN
10
10
2
2
CEsat
10
10
3
3
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
10
10
006aac355
006aac357
I
I
4
4
C
C
(mA)
(mA)
10
10
5
5
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