SUD50N03-09P-T1-E3 Vishay, SUD50N03-09P-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-09P-T1-E3
• Description: N CHANNEL MOSFET, 30V, 63A
• Manufacturer: Vishay

Specifications of SUD50N03-09P-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 63A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 65.2W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics (25 C Unless Otherwise Noted)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
C
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V
V
6 V
DS
DS
V
Output Characteristics
GS
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
I
D
Transconductance
= 10, 9, 8, 7 V
– Drain Current (A)
Capacitance
S-57253—Rev. E, 24-Feb-98
5 V
C
oss
2, 3 V
T
C
4 V
= –55 C
C
125 C
iss
25 C
Siliconix was formerly a division of TEMIC Semiconductors
Phone [phone]
V
I
FaxBack [phone]
D
DS
= 50 A
V
On-Resistance vs. Drain Current
= 15 V
GS
V
GS
= 4.5 V
Q
Transfer Characteristics
g
– Gate-to-Source Voltage (V)
I
T
D
– Total Gate Charge (nC)
C
– Drain Current (A)
= –55 C
Gate Charge
SUD50N03-10
V
www.siliconix.com
GS
= 10 V
125 C
Siliconix
25 C
3