SUD50N03-06P-E3 Vishay, SUD50N03-06P-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-06P-E3
• Description: N CHANNEL MOSFET, 30V, 30A, TO-252
• Manufacturer: Vishay

Specifications of SUD50N03-06P-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 9.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 88W
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0065 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71931
S-32425—Rev. C, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3500
3000
2500
2000
1500
1000
100
500
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
−50 −25
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
= 30 A
C
T
= 10 V
rss
C
10
4
V
T
0
= −55_C
DS
J
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
I
Transconductance
D
25
− Drain Current (A)
Capacitance
20
8
50
C
C
oss
iss
75
30
12
100
125
40
16
125_C
25_C
150
175
50
20
0.010
0.008
0.006
0.004
0.002
0.000
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 50 A
T
On-Resistance vs. Drain Current
= 10 V
J
V
0.3
V
20
8
= 150_C
GS
SD
Q
= 4.5 V
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
40
16
0.6
SUD50N02-06P
Vishay Siliconix
60
24
0.9
T
V
V
J
GS
GS
= 25_C
= 6.3 V
= 10 V
www.vishay.com
80
32
1.2
100
40
1.5
3