IRFP27N60K Vishay, IRFP27N60K Datasheet - Page 6

• Manufacturer Part Number: IRFP27N60K
• Description: N CHANNEL MOSFET, 600V, 27A, TO-247
• Manufacturer: Vishay

Specifications of IRFP27N60K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 27 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFP27N60K, SiHFP27N60K
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12a - Unclamped Inductive Test Circuit
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Q
GS
R
20 V
G
V
DS
Charge
t
Q
p
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
950
760
570
380
190
15 V
0
25
Driver
Starting Tj, Junction Temperature
+
- V
A
DD
50
A
75
100
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
( C)
I
°
AS
12 V
125
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
13A
18A
28A
I D
0.2 µF
150
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0487-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91219
D.U.T.
V
I
D
DS
+
-
V
DS