IRFP27N60K Vishay, IRFP27N60K Datasheet - Page 3

• Manufacturer Part Number: IRFP27N60K
• Description: N CHANNEL MOSFET, 600V, 27A, TO-247
• Manufacturer: Vishay

Specifications of IRFP27N60K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 27 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
1000
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM 5.0V
TOP
BOTTOM 5.0V
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
VGS
VGS
15V
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
12V
10V
8.0V
7.0V
6.0V
5.5V
1
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
10
10
5.0V
5.0V
This datasheet is subject to change without notice.
100
100
1000.00
100.00
10.00
IRFP27N60K, SiHFP27N60K
1.00
0.10
0.01
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
5.0
-60
I
D
Fig. 3 - Typical Transfer Characteristics
=
-40
T J = 25°C
28A
V GS , Gate-to-Source Voltage (V)
-20
T , Junction Temperature
7.0
J
0
20
9.0
40
www.vishay.com/doc?91000
60
Vishay Siliconix
V DS = 100V
20µs PULSE WIDTH
11.0
80
T J = 150°C
100
( C)
13.0
V
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°
120
GS
=
140
10V
15.0
160
3