IRFP27N60K Vishay, IRFP27N60K Datasheet - Page 2

• Manufacturer Part Number: IRFP27N60K
• Description: N CHANNEL MOSFET, 600V, 27A, TO-247
• Manufacturer: Vishay

Specifications of IRFP27N60K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 27 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFP27N60K, SiHFP27N60K
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted)
a
SYMBOL
This datasheet is subject to change without notice.
SYMBOL
V
C
R
V
oss
C
C
t
t
I
R
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
RRM
GSS
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
SM
t
I
t
t
on
thCS
thJC
DS
oss
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
V
V
T
J
GS
GS
GS
GS
GS
V
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C, I
DS
T
g
Reference to 25 °C, I
= 10 V
= 0 V
= 0 V
= 0 V
= 10 V
J
= 4.3 , V
= 480 V, V
= 25 °C, I
V
V
TYP.
V
V
TEST CONDITIONS
f = 1.0 MHz, see fig. 5
0.24
V
oss
DS
DS
GS
DD
DS
-
-
= 600 V, V
F
= V
while V
= 0 V, I
= 300 V, I
V
= 50 V, I
= 27 A, dI/dt = 100 A/μs
V
GS
V
V
V
GS
DS
S
GS
GS
GS
DS
DS
I
D
= 27 A, V
= ± 30 V
V
, I
= 10 V, see fig. 10
= 25 V
= 27 A, V
see fig. 6 and 13
= 0 V
= 0 V, T
= 480 V , f = 1.0 MHz
DS
= 1.0 V , f = 1.0 MHz
D
DS
D
= 250 μA
D
= 250 μA
= 0 V to 480 V
D
I
is rising from 0 % to 80% V
GS
D
= 16 A
= 27 A
= 16 A
D
= 0 V
GS
J
= 1 mA
DS
G
= 125 °C
= 0 V
= 480 V
b
MAX.
b
0.29
b
D
S
40
b
-
b
MIN.
600
3.0
14
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0487-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
DS
Document Number: 91219
.
TYP.
4660
5490
0.18
640
460
120
250
110
620
41
27
43
38
11
36
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.22
250
180
110
920
5.0
1.5
S
50
56
86
27
16
53
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
mV/°C
D
UNIT
)
nA
μA
nC
μC
pF
ns
ns

V
V
S
A
V
A