IRFP27N60K Vishay, IRFP27N60K Datasheet

N CHANNEL MOSFET, 600V, 27A, TO-247

IRFP27N60K

Manufacturer Part Number
IRFP27N60K
Description
N CHANNEL MOSFET, 600V, 27A, TO-247
Manufacturer
Vishay
Datasheet

Specifications of IRFP27N60K

Transistor Polarity
N Channel
Continuous Drain Current Id
27A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
220mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Configuration
Single
Resistance Drain-source Rds (on)
0.22 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
27 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247AC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
TO-247AC
 27 A, dI/dt  390 A/μs, V
()
J
= 25 °C, L = 1.4 mH, R
G
D
a
S
c
a
a
b
DD
V
GS
 V
g
= 10 V
= 25 , I
DS
G
, T
N-Channel MOSFET
J
Single
 150 °C.
600
180
56
86
AS
This datasheet is subject to change without notice.
= 27 A, dV/dt = 13 V/ns (see fig. 12).
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.18
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247AC
IRFP27N60KPbF
SiHFP27N60K-E3
IRFP27N60K
SiHFP27N60K
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Hard Switching Primary or PFC Switch
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
Requirement
Ruggedness
and Current
IRFP27N60K, SiHFP27N60K
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
600
110
530
500
4.0
1.1
27
18
27
50
13
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFP27N60K Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP27N60K, SiHFP27N60K Power MOSFET FEATURES • Low Gate Charge Q 600 Requirement 0.18 • ...

Page 2

... IRFP27N60K, SiHFP27N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... PULSE WIDTH Tj = 150°C 0.01 0 Drain-to-Source Voltage (V) Fig Typical Output Characteristics Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP27N60K, SiHFP27N60K 1000.00 100.00 10.00 1.00 5.0V 0.10 0.01 100 5.0 3.5 3 ...

Page 4

... IRFP27N60K, SiHFP27N60K Vishay Siliconix 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 28A V = 480V 300V 120V Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... RESPONSE) 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP27N60K, SiHFP27N60K R Fig. 10a - Switching Time Test Circuit 125 150 10 % ...

Page 6

... IRFP27N60K, SiHFP27N60K Vishay Siliconix D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Driver + - Fig. 12b - Unclamped Inductive Waveforms 950 ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91219. Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP27N60K, SiHFP27N60K Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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